JEOL: Sales launch of HAXIS: The New Low-angle Ion Milling Scanning Electron Microscope

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Postmedia has not reviewed the content. by Business Wire JEOL: Sales launch of HAXIS: The New Low-angle Ion Milling Scanning Electron MicroscopeAuthor of the article:HAXIS Low-angle Ion Milling Scanning Electron Microscope Business WireTOKYO — JEOL Ltd. (President & CEO Izumi Oi) announces the development of its new low‑angle ion‑milling scanning electron microscope, HAXIS, and will commence sales on October 5, 2026.THIS CONTENT IS RESERVED FOR SUBSCRIBERS ONLYSubscribe now to read the latest news in your city and across Canada.Exclusive articles from Barbara Shecter, Joe O'Connor, Gabriel Friedman, and others.Daily content from Financial Times, the world's leading global business publication.Unlimited online access to read articles from Financial Post, National Post and 15 news sites across Canada with one account.National Post ePaper, an electronic replica of the print edition to view on any device, share and comment on.Daily puzzles, including the New York Times Crossword.SUBSCRIBE TO UNLOCK MORE ARTICLESSubscribe now to read the latest news in your city and across Canada.Exclusive articles from Barbara Shecter, Joe O'Connor, Gabriel Friedman and others.Daily content from Financial Times, the world's leading global business publication.Unlimited online access to read articles from Financial Post, National Post and 15 news sites across Canada with one account.National Post ePaper, an electronic replica of the print edition to view on any device, share and comment on.Daily puzzles, including the New York Times Crossword.REGISTER / SIGN IN TO UNLOCK MORE ARTICLESCreate an account or sign in to continue with your reading experience.Access articles from across Canada with one account.Share your thoughts and join the conversation in the comments.Enjoy additional articles per month.Get email updates from your favourite authors.THIS ARTICLE IS FREE TO READ REGISTER TO UNLOCK.Create an account or sign in to continue with your reading experience.Access articles from across Canada with one accountShare your thoughts and join the conversation in the commentsEnjoy additional articles per monthGet email updates from your favourite authorsSign In or Create an AccountHAXIS Low-angle Ion Milling Scanning Electron MicroscopeBackground of developmentAs advanced semiconductor device structures continue to shrink and grow more complex, it has become difficult to contact and measure microscale circuits using nano-manipulators. In addition, contact caused by probing may affect the analysis target, necessitating new failure analysis methods.This advertisement has not loaded yet, but your article continues below.JEOL has conducted long-term research on the passive voltage contrast (PVC) detection technology and established a method for stable, highly reproducible PVC observation technology through the advancement of detectors and sample preparation techniques.Get the latest headlines, breaking news and columns.By signing up you consent to receive the above newsletter from Postmedia Network Inc.A welcome email is on its way. If you don't see it, please check your junk folder.The next issue of Top Stories will soon be in your inbox.We encountered an issue signing you up. Please try againHAXIS is JEOL’s new semiconductor failure analysis platform that combines such technologies.It has realized clear and highly reproducible PVC observation even with advanced semiconductors. By visually detecting electrical anomalies while minimizing the effects of processing damage and contamination, it is possible to efficiently identify the defect location and determine the cause. The use of argon (Ar), an inert gas, ensures stable surface quality and reduces running costs.The quality of PVC observation is significantly affected by the surface condition of the sample after delayering. HAXIS uses a unique Low-Angle Ion Milling (LIM) delayering technique using Ar ion beams to create a flat surface with minimal damage to the sample surface. This enables clear and highly reproducible PVC observation while retaining structure and potential information even in advanced devices.Semiconductor failure analysis involves multiple steps, from defect localization to physical analysis and root-cause investigation. As device complexity increases, shortening the turnaround time from failure detection to actionable results becomes increasingly critical.HAXIS introduces a new approach to failure localization by integrating LIM delayering with SEM imaging and passive voltage contrast (PVC) analysis. This combined workflow enables rapid and highly accurate identification of failure locations, supporting QTAT (Quick Turnaround Time) failure analysis and accelerating the transition from electrical failure detection to physical analysis and root-cause identification.Clear PVC imagingCost effective Ar processingDamageless Delayering with LIMLayer-by-layer LIM / PVC AnalysisContamination free transferView source version on businesswire.com: This advertisement has not loaded yet.Notice for the Postmedia NetworkThis website uses cookies to personalize your content (including ads), and allows us to analyze our traffic. Read more about cookies here. 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